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| LED - Chip 25.02.2008 Radiation Infrared Type Point Source Technology AlGaAs/GaAs ELC-875-19-20 rev. 08 Electrodes P (anode) up typ. dimensions (m) 360 310 typ. thickness 300 ( 20) m 210 anode gold alloy, 1.5 m cathode gold alloy, 0.5 m +7 O50 -2 Maximum Ratings PS-11 Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward current (DC) Peak forward current tP 50 s, tP/T = 1/2 Symbol IF IFM Min Typ Max 50 100 Unit mA mA Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions IF = 20 mA Forward voltage Forward voltage Reverse voltage Radiant power* Radiant power* Peak wavelength Spectral bandwidth at 50% Switching time IF = 50 mA IR = 10 A IF = 20 mA IF = 50 mA IF = 20 mA IF = 20 mA IF = 20 mA Symbol VF VF VR e e p 0.5 tr , tf Min Typ 1.4 1.5 Max 1.8 Unit V V V 5 0.4 0.6 1.9 865 875 40 16 885 mW mW nm nm ns *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type EL-875-19-20 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 |
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